BCW66K
NPN Silicon AF Transistors
• For general AF applications
2
3
• High current gain
1
• Low collector-emitter saturation voltage
• Complementary type: BCW68 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BCW66KF
EFs
1=B
2=E
3=C
SOT23
BCW66KG
EGs
1=B
2=E
3=C
SOT23
BCW66KH
EHs
1=B
2=E
3=C
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
45
Collector-base voltage
VCBO
75
Emitter-base voltage
VEBO
5
Collector current
IC
Peak collector current, tp ≤ 10 ms
ICM
Base current
IB
100
Peak base current
IBM
200
Total power dissipation-
Ptot
500
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
Value
800
1
Unit
V
mA
A
mA
TS ≤ 115 °C
1
-65 ... 150
Value
≤ 70
Unit
K/W
2011-09-30
BCW66K
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 45
Unit
V
IC = 10 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
75
-
-
V(BR)EBO
5
-
-
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
µA
ICBO
VCB = 45 V, IE = 0
-
-
0.02
VCB = 45 V, IE = 0 , TA = 150 °C
-
-
20
-
-
20
Emitter-base cutoff current
IEBO
nA
VEB = 5 V, IC = 0
DC current gain2)
-
hFE
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.F
75
-
-
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.G
110
-
-
IC = 100 µA - 10 mA, VCE = 1 V, hFE-grp.H
180
-
-
IC = 100 mA, VCE = 1 V, hFE-grp.F
100
160
250
IC = 100 mA, VCE = 1 V, hFE-grp.G
160
250
400
IC = 100 mA, VCE = 1 V, hFE-grp.H
250
350
630
IC = 500 mA, VCE = 1 V, hFE-grp.F, G, H
40
-
-
Collector-emitter saturation voltage2)
V
VCEsat
IC = 100 mA, IB = 10 mA
-
-
0.3
IC = 500 mA, IB = 50 mA
-
-
0.45
IC = 100 mA, IB = 10 mA
-
-
1.25
IC = 500 mA, IB = 50 mA
-
-
1.25
Base emitter saturation voltage2)
VBEsat
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse
test: t < 300µs; D < 2%
2
2011-09-30
BCW66K
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
170
-
MHz
Ccb
-
3
-
pF
Ceb
-
40
-
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
3
2011-09-30
BCW66K
DC current gain hFE = ƒ(IC)
VCE = 1 V
10 3
Collector-emitter saturation voltage
IC = ƒ(VCEsat ), hFE = 10
BCW 65/66
5
EHP00396
BCW 65/66
10 3
EHP00395
mA
100 ˚C
150 ˚C
25 ˚C
-50 ˚C
ΙC
h FE
10 2
25 ˚C
10 2
-50 ˚C
5
5
10 1
5
10 1
0
10
5
5
10 0
10 -1
5 10 0
5 10 1
5 10 2
10 -1
mA 10 3
0
200
400
600 mV 800
ΙC
VCE sat
Collector cutoff current ICBO = ƒ(TA)
VCB = VCEmax
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
10 3
BCW 65/66
EHP00394
10 5
nA
mA
150 ˚C
25 ˚C
-50 ˚C
ΙC
2
10
Ι CB0
BCW 65/66
EHP00393
10 4
5
5
10 3
10
max
5
1
5
10 2
5
typ
0
10
10
5
1
5
10 -1
0
1
2
3
V
10 0
4
0
50
100
˚C
150
TA
VBE sat
4
2011-09-30
BCW66K
Transition frequency fT = ƒ(IC)
VCE = 5 V
10 3
BCW 65/66
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
EHP00391
75
pF
MHz
fT
5
60
RTF-2
55
10
50
45
40
2
CEB
35
30
5
25
20
15
10
CCB
5
10 1
10 0
10 1
10 2
mA
0
0
10 3
2
4
6
8
10
12
14
V
16
ΙC
20
RTF-1
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
10 3
550
BCW 65/66
Ptot max
5
Ptot DC
EHP00392
tp
D=
T
450
tp
T
400
10 2
350
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
300
250
200
10 1
150
5
100
50
0
0
15
30
45
60
75
90 105 120
10 0
10 -6
150
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
5
2011-09-30
Package SOT23
BCW66K
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
6
2011-09-30
BCW66K
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ().
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
7
2011-09-30